This is where the research project ZuverSichT (a German acronym for »Reliable Saxon GaN Technologies«) comes in. Together with its project partners, Fraunhofer IIS’s Engineering of Adaptive Systems Division is developing new methods for directly analyzing and improving the reliability of semiconductor components based on gallium nitride (GaN). This work centers around innovative test structures, measuring procedures, and simulation models that can be used to detect aging and failure mechanisms at an early stage.

The resulting insights are then incorporated directly into the development process for new semiconductors. Companies can therefore develop high-performance and robust electronic systems faster, reduce development risks, and lay the foundation for next-generation, energy-efficient applications. At the same time, the project is boosting the innovative capacity of the microelectronics industry in Germany and contributing to the advancement of future-proof key technologies.

To this end, Fraunhofer IIS is developing methods and models to support the design process and evaluate the reliability of GaN circuits in the context of Design for Reliability (DfR). This work includes thermal simulations, reliability models for FEoL processes, their integration into the Process Design Kit (PDK), and the development and analysis of heater structures and suitable measurement models for qualification.

Project partners: Fraunhofer IIS, Engineering of Adaptive Systems Division, Fraunhofer IKTS, Fraunhofer IWS, X-FAB Dresden GmbH & Co.KG, AXO Dresden GmbH, wiatec GmbH, and EDC Engineering GmbH

Funding period: August 15, 2025 – December 31, 2027